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1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.
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- MRS Online Proceedings Library Archive / Volume 799 / 2003
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- 01 February 2011, Z7.2/T7.2
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- 2003
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Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.
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- MRS Online Proceedings Library Archive / Volume 672 / 2001
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- 21 March 2011, O8.5
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- 2001
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MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
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- MRS Online Proceedings Library Archive / Volume 571 / 1999
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- 10 February 2011, 109
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- 1999
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Mbe Growth, Structural and Optical Characterization of Inas/Ingaaias Self-Organized Quantum Dots
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- MRS Online Proceedings Library Archive / Volume 583 / 1999
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- 10 February 2011, 57
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- 1999
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Magnetoelastic anisotropy distribution in glass-coated microwires
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- Journal of Materials Research / Volume 11 / Issue 10 / October 1996
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- 31 January 2011, pp. 2499-2505
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- October 1996
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Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications
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- MRS Online Proceedings Library Archive / Volume 417 / 1995
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- 10 February 2011, 141
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- 1995
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Preface
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp xi-xiv
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4 - Electronic structure and properties of nonstoichiometric carbides and nitrides
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 92-131
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Index
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 254-256
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6 - Hydrogen-containing carbides and nitrides and their solid solutions
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 160-175
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Frontmatter
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp i-vi
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5 - s- and p-element impurities in carbides, nitrides and their solid solutions
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 132-159
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7 - Influence of metal sublattice doping on electronic properties of carbides and nitrides
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 176-196
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Contents
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp vii-x
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1 - Theoretical methods used to calculate the electronic structure and properties of refractory compounds
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 1-17
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3 - Electronic structure and interatomic interactions in transition metal nitrides
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 58-91
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References
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 233-253
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Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994
2 - Electronic structure, chemical bonding and properties of binary carbides
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 18-57
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8 - Electronic structure of the surfaces of carbides and nitrides
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- Electronic Structure of Refractory Carbides and Nitrides
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- 30 March 2010
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- 03 February 1994, pp 197-232
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